switching transistor npn silicon maximum ratings rating symbol value unit collector ?emitter voltage v ceo 15 vdc collector ?emitter voltage v ces 40 vdc collector ?base voltage v cbo 40 vdc emitter ?base voltage v ebo 5.0 vdc collector current e continuous e 10 s pulse i c 300 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (i c = 100 adc, v be = 0) v (br)ces 40 e vdc collector ?emitter sustaining voltage (1) (i c = 10 madc, i b = 0) v ceo(sus) 15 e vdc collector ?base breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 40 e vdc emitter ?base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 5.0 e vdc collector cutoff current (v ce = 20 vdc, v be = 0) (v ce = 20 vdc, v be = 0, t a = 65 c) i ces e e 0.5 3.0 adc on characteristics (1) dc current gain (i c = 30 madc, v ce = 0.4 vdc) (i c = 100 madc, v ce = 0.5 vdc) (i c = 300 ma, v ce = 1.0 vdc) h fe 30 25 15 120 e e e collector ?emitter saturation voltage (i c = 30 madc, i b = 3.0 madc) (i c = 100 madc, i b = 10 madc) (i c = 300 madc, i b = 30 madc) (i c = 30 ma, i b = 3.0 ma, t a = 65 c) v ce(sat) e e e e 0.2 0.28 0.5 0.3 vdc base ?emitter saturation voltage (i c = 30 madc, i b = 3.0 madc) (i c = 100 madc, i b = 10 madc) (i c = 300 madc, i b = 30 ma) v be(sat) 0.73 e e 0.95 1.2 1.7 vdc 1. pulse test: pulse width 300 s; duty cycle 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 october, 2001 ? rev. 2 1 publication order number: mps3646/d mps3646 on semiconductor preferred device case 29?11, style 1 to?92 (to?226aa) 1 2 3 collector 3 2 base 1 emitter
mps3646 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit small?signal characteristics current ?gain e bandwidth product (i c = 30 madc, v ce = 10 vdc, f = 100 mhz) f t 350 e mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo e 5.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo e 9.0 pf switching characteristics turn?on time (v 10 vd i 300 ad i 30 ad ) t on e 18 ns delay time (v cc = 10 vdc, i c = 300 madc, i b1 = 30 madc) ( fi g ure 1 ) t d e 10 ns rise time (figure 1) t r e 15 ns turn?off time (v cc = 10 vdc, i c = 300 madc, i b1 = i b2 = 30 madc) t off e 28 ns fall time (v cc 10 vdc , i c 300 madc , i b1 i b2 30 madc) (figure 1) t f e 15 ns storage time (v cc = 10 vdc, i c = 10 madc, i b1 = i b2 = 10 madc) (figure 2) t s e 18 ns +10 v figure 1. switching time test circuit figure 2. charge storage time test circuit 120 33 to sampling scope t r < 1.0 ns z in = 100 k w ?3.0 v 1.0 k 0.1 50 v in +7.6 v 0 t r , t f < 1.0 ns pulse width 240 ns z in = 50 w +10 v 500 91 to sampling scope t r 1.0 ns z in = 100 k w +11 v 500 56 0 ?10 v t r < 1.0 ns pulse width = 300 ns duty cycle = 2.0% z in = 50 w 0.1 890 aao v in +6.0 v ?4 v v out 0 10% pulse waveform at point aao 10% t s
mps3646 http://onsemi.com 3 current gain characteristics figure 3. minimum current gain i c , collector current (ma) 20 30 50 70 100 h , dc current gain 2.0 3.0 10 50 70 10 100 1.0 200 30 20 5.0 7.0 fe mps3646 v ce = 1 v t j = 125 c 25 c -15 c -55 c aono condition characteristics figure 4. collector saturation region 0.4 0.6 0.8 1.0 0.2 0.1 v , maximum collector-emitter 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 10 ma 50 ma 100 ma 200 ma mps3646 t j = 25 c 20 30 10 voltage (volts) figure 5. saturation voltage limits i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 6. temperature coefficients i c , collector current (ma) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 80 120 160 40 200 -1.0 -1.5 -2.0 200 i c /i b = 10 t j = 25 c max v be(sat) (25 c to 125 c) (-55 c to 25 c) vc for v ce(sat) vb for v be v , temperature coefficients (mv/ c) q v sat , saturation voltage (volts) 3.0 7.0 30 70 min v be(sat) max v ce(sat) (25 c to 125 c) (-55 c to 25 c)
mps3646 http://onsemi.com 4 dynamic characteristics figure 7. delay time i c , collector current (ma) 30 50 70 100 200 20 figure 8. rise time i c , collector current (ma) 1.0 2.0 5.0 10 20 50 5.0 100 200 v cc = 10 v t j = 25 c t d , delay time (ns) t r , rise time (ns) 10 7.0 t d @ v eb(off) = 3 v 2 v 0 v 30 50 70 100 200 20 1.0 2.0 5.0 10 20 50 5.0 100 200 10 7.0 i c /i b = 10 t j = 25 c t j = 125 c v cc = 10 v v cc = 3 v figure 9. storage time i c , collector current (ma) t s , storage time (ns) 20 30 50 1.0 2.0 5.0 10 20 50 5.0 100 200 10 7.0 t j = 25 c t j = 125 c i c /i b = 20 i c /i b = 10 t s t s - 1/8 t f i b1 = i b2 figure 10. fall time i c , collector current (ma) t f , fall time (ns) 1.0 2.0 5.0 10 20 50 100 200 i c /i b = 20 i c /i b = 10 30 50 70 100 200 20 5.0 10 7.0 v cc = 10 v t j = 25 c t j = 125 c figure 11. junction capacitance reverse bias (vdc) capacitance (pf) 5.0 7.0 10 0.1 0.2 0.5 1.0 2.0 5.0 2.0 10 3.0 max typ figure 12. maximum charge data i c , collector current (ma) 1.0 2.0 5.0 10 20 50 100 200 200 300 500 700 1000 100 20 70 50 c ibo c obo q, charge (pc) 30 3.0 7.0 30 70 i c /i b = 10 t j = 25 c t j = 125 c q t q a v cc = 3 v v cc = 10 v v cc = 3 v
mps3646 http://onsemi.com 5 package dimensions case 029?11 (to?226aa) issue ad c r n n 1 j section x?x d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- style 1: pin 1. emitter 2. base 3. collector
mps3646 http://onsemi.com 6 notes
mps3646 http://onsemi.com 7 notes
mps3646 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4?32?1 nishi?gotanda, shinagawa?ku, tokyo, japan 141?0031 phone : 81?3?5740?2700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mps3646/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 800?282?9855 toll free usa/canada
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